Photodetector based on transition metal dichalcogen compound and method of manufacturing the same

● 발명자: 김태환, 이정헌, 전영표
● 등록(출원)번호:US11522146B2(2022.12.06)
● 특허유형: 미국특허

Abstract

Disclosed are a photodetector using a photoelectric conversion effect wherein current changes according to light; and a method of manufacturing the photodetector. More particularly, a photodetector manufactured using a transition metal dichalcogen compound having high sensitivity to wavelengths of light in the visible light region by forming a sensor layer utilizing a transition metal dichalcogen compound such that the thickness of the sensor layer can be adjusted is provided.